GTM GSBAW56
The GSBAW56 consists of two high-speed switching diodes with common anodes, fabricated in planar technology, and encapsulated in a small SOT-323 plastic SMD package.| Part No. | GSBAW56 |
|---|---|
| Datasheet | GSBAW56 Download |
| Manufacturer |  GTM |
| Description | SWITCHING DIODE |
| Buy | Stock & Price |
DESCRIPTION
ISSUED DATE :2005/12/23 REVISED DATE : S U R F A C E M O U N T, S W I T C H I N G D I O D E Package Dimensions 3 1 REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 2 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC.ABSOLUTE MAXIMUM RATINGS
at TA = 25 Parameter Junction Temperature Storage Temperature Repetitive Peak Reverse Voltage Continuous Reverse Voltage Continuous Forward Current Repetitive Peak Forward Current Non-Repetitive Peak Forward Current (1ms) Total Power Dissipation Notes: 1. Device mounted on an FR4 printed-circuit board. single diode loaded (note1) double diode loaded (note1) Symbol Tj Tstg VRRM VR IF IFRM IFSM PD Ratings +125 -65 ~ +150 85 75 150 130 500 1 250 V V mA mA A mW UnitELECTRICAL CHARACTERISTICS
(at TA = 25 Parameter Reverse Voltage Symbol VR VF(1) Forward Voltage VF(2) VF(3) VF(4) Reverse Current Diode Capacitance Reverse Recovery Time IR CD Trr Min.