DESCRIPTION
Package Dimensions PNP EPITAXIAL PLANAR TRANSISTOR REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. ABSOLUTE MAXIMUM RATINGS
at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55 ~ +150 -50 -45 -5 800 225 V V V mA mW Unit Characteristics Symbol BVCBO BVCEO BVCES BVEBO ICES IEBO *VCE(sat) *VBE(on) *hFE fT Cob at Ta = 25 Min. -50 -45 -50 -5 100 Typ. 100 Max. -100 -100 -700 -1.2 630 12 MHz pF Unit V V V V nA nA mV V IC=-100uA IC=-10mA IC=-100uA IE=-100uA VCE=-25V VEB=-4V IC=-500mA, IB=-50mA VCE=-1V, IC=-300mA VCE=-1V, IC=-100mA VCE=-5V, IC=-10mA, f=100MHz VCB=-10V, f=1MHz, IE=0A * Pulse Test: Pulse Width 380 s, Duty Cycle 2% Test Conditions Classificat...
GTM
