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GSC4420 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GSC4420 uses advanced trench technology to provide excellent on-resistance, shoot-through immunity and body diode characteristics.

Features

  • Simple Drive Requirement.
  • Lower On-resistance.
  • Fast Switching Characteristic Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP. Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain C.

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Datasheet preview – GSC4420

Datasheet Details

Part number GSC4420
Manufacturer GTM
File Size 317.89 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet GSC4420 Datasheet
Additional preview pages of the GSC4420 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/10/19 REVISED DATE : GSC4420 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 10.5m 13.7A Description The GSC4420 uses advanced trench technology to provide excellent on-resistance, shoot-through immunity and body diode characteristics. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for use as a synchronous switch or in PWM applications. Features *Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.
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