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GSC93BC56 Datasheet 2-wire Serial Eeproms

Manufacturer: GTM

Overview: .. ISSUED DATE :2006/06/14 REVISED DATE : GSC93BC46/56/66 3-wire Serial EEPROMs.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The GSC93BC family provides 1K, 2K and 4K of serial electrically erasable and programmable read-only memory (EEPROM).

The wide Vdd range allows for low-voltage operation down to 1.8V and up to 5.5V.

The device, fabricated using traditional CMOS EEPROM technology, is optimized for many industrial and mercial applications where low-voltage and low-power operation is essential.

Key Features

  • Internally organized as 128x8 or 64x16 (1K), 256x8 or 128x16 (2K), 512x8 or 256x16 (4K).
  • Wide-voltage range operation: 1.8V~5.5V.
  • 3-wire serial interface bus.
  • Date retention: 100years ʳ Package Dimensions.
  • High endurance: 1,000,000 Write Cycles.
  • 2MHz (5V) clock rate.
  • Sequential read operation.
  • Self-timed write cycle (10ms max) REF. A B C D E F Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 REF. M H L J K G Millimet.

More Datasheets from GTM

Part Number Description
GSC93BC46 2-WIRE SERIAL EEPROMS
GSC93BC66 2-WIRE SERIAL EEPROMS
GSC9406 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GSC9410 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GSC9431 P-CHANNEL ENHANCEMENT MODE POWER MOSFET
GSC9435 P-CHANNEL ENHANCEMENT MODE POWER MOSFET
GSC9435M P-CHANNEL ENHANCEMENT MODE POWER MOSFET
GSC945 NPN EPITAXIAL SILICON TRANSISTOR
GSC9475 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GSC9478 N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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