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GSC945 - NPN EPITAXIAL SILICON TRANSISTOR

Description

The GSC945 is an audio frequency amplifier high frequency OSC NPN transistor.

Features

  • Collector-Emitter Voltage BVCBO=50V.
  • Collector current up to 150mA.
  • High hFE linearity Package Dimensions D E S1 TO-92 A b1 S E A T IN G PLANE L C e1 b e Absolute Maximum Ratings (TA=25к) Parameter Symbol Collector to Base Voltage VCBO Collector to Emitter Voltage VCEO Emitter to Base Voltage VEBO Collector Current IC Base Current IB Total Device Dissipation PD Junction Temperature TJ Storage Temperature Tstg REF. A S1 b b1 C Millimeter Min. Max. 4.45.

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Datasheet Details

Part number GSC945
Manufacturer GTM
File Size 290.23 KB
Description NPN EPITAXIAL SILICON TRANSISTOR
Datasheet download datasheet GSC945 Datasheet

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Full PDF Text Transcription

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www.DataSheet4U.com ISSUED DATE :2005/06/14 REVISED DATE : GSC945 NPN EPITAXIAL SILICON TRANSISTOR Description The GSC945 is an audio frequency amplifier high frequency OSC NPN transistor. Features ԦCollector-Emitter Voltage BVCBO=50V ԦCollector current up to 150mA ԦHigh hFE linearity Package Dimensions D E S1 TO-92 A b1 S E A T IN G PLANE L C e1 b e Absolute Maximum Ratings (TA=25к) Parameter Symbol Collector to Base Voltage VCBO Collector to Emitter Voltage VCEO Emitter to Base Voltage VEBO Collector Current IC Base Current IB Total Device Dissipation PD Junction Temperature TJ Storage Temperature Tstg REF. A S1 b b1 C Millimeter Min. Max. 4.45 4.7 1.02 - 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.
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