Datasheet4U Logo Datasheet4U.com

GSC9478 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GSC9478 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Features

  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0̓ 8̓ 0.40 0.90 0.19 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45̓ 1.27 TYP. Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power.

📥 Download Datasheet

Datasheet preview – GSC9478

Datasheet Details

Part number GSC9478
Manufacturer GTM
File Size 358.74 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet GSC9478 Datasheet
Additional preview pages of the GSC9478 datasheet.

📁 Similar Datasheet

  • GSC-2401-R - 100/1000BASE- Tx Transformer (U-TRON)
  • GSC-4807-R - 100/1000 BASE-Tx Transformer (U-TRON)
  • GSC20-12 - 20 WATT GLOBAL PERFORMANCE SWITCHERS (SL Power Electronics)
  • GSC20-15 - 20 WATT GLOBAL PERFORMANCE SWITCHERS (SL Power Electronics)
  • GSC20-24 - 20 WATT GLOBAL PERFORMANCE SWITCHERS (SL Power Electronics)
  • GSC20-28 - 20 WATT GLOBAL PERFORMANCE SWITCHERS (SL Power Electronics)
  • GSC20-5 - 20 WATT GLOBAL PERFORMANCE SWITCHERS (SL Power Electronics)
  • GSC2D0465F - SiC Schottky Barrier Diode (GME)
  • GSC301-10M0900 - 900MHz Band 10dB Chip Coupler (Soshin)
  • GSC302-20M0900 - 900MHz Band 20dB Chip Coupler (Soshin)
Other Datasheets by GTM
  • GSC9475 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • GSC9406 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • GSC9410 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • GSC9431 - P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • GSC9435 - P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • GSC9435M - P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • GSC945 - NPN EPITAXIAL SILICON TRANSISTOR
  • GSC93BC46 - 2-WIRE SERIAL EEPROMS

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/03/02 REVISED DATE :2005/09/30B GSC9478 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 60V 64m 4.8A Description The GSC9478 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features *Simple Drive Requirement *Low Gate Charge *Fast Switching Characteristic Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0̓ 8̓ 0.40 0.90 0.19 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.
Published: |