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GSMBT1015 Datasheet PDF

GTM GSMBT1015

The GSMBT1015 is designed for use in driver stage of AF amplifier and general purpose amplification.
Part No. GSMBT1015
Datasheet GSMBT1015 Download
Manufacturer
GTM
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GSMBT1015 datasheet page 1 preview

DESCRIPTION

P NP E PITAXI AL P L ANAR T RANS ISTO R Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC.

ABSOLUTE MAXIMUM RATINGS

at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55~+150 -50 -50 -5 -150 225 V V V mA mW Unit Characteristics Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 fT Cob at Ta = 25 Min. -50 -50 -5 120 25 80 Typ. Max. -100 -100 -300 -1.1 700 7 MHz pF Unit V V V nA nA mV V IC=-100uA IC=-1mA IE=-10uA VCB=-50V VEB=-5V IC=-100mA, IB=-10mA IC=-100mA, IB=-10mA VCE=-6V, IC=-2mA VCE=-6V, IC=-150mA VCE=-10V, IC=-1mA, f=100MHz VCB=-10V, f=1MHz,IE=0 * Pulse Test: Pulse Width 380us, Duty Cycle 2% Test Conditions Cla...
GSMBT1015 page 2 preview