DESCRIPTION
FEATURES
P NP EP ITAXI AL P L ANAR T RANS ISTO R Excellent hFE Linearity : hFE (0.1mA)/ hFE (2mA)=0.95 (Typ.) Complementary to GSMBT4075 Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. ABSOLUTE MAXIMUM RATINGS
at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Base Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC IB PD Ratings +150 -55~+150 -50 -50 -5 -150 -30 225 Unit V V V mA mA mW ELECTRICAL CHARACTERISTICS
(Ta = 25 Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 fT Cob Min. -50 -50 -5 70 25 80 Typ. - ) Max. -100 -100 -300 -1.1 400 7 Unit V V V nA nA mV V Test Conditions IC=-100uA , IE=0 IC=-1mA, IB=0 IE=-10uA ,IC=0 VCB=-50V, IE=0 VEB=-5V, IC=0 IC=-100mA, IB=-10mA...
GTM
