DESCRIPTION
Package Dimensions NPN SILICON TRANSISTOR REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. ABSOLUTE MAXIMUM RATINGS
at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD ,unless otherwise noted) Max. 100 100 250 1.2 MHz Unit V V V nA nA mV V IC=100uA, IE=0 IC=1mA, IB=0 IE=100uA, IC=0 VCB=80V, IE=0 VCE=80V, IB=0 IC=100mA, IB=10mA VCE=1V, IC=100mA VCE=1V, IC=10mA VCE=1V, IC=100mA VCE=2V, IC=10mA, f=100MHz * Pulse Test: Pulse Width 380 s, Duty Cycle 2% Ratings +150 -55~+150 80 80 4 500 225 Unit V V V mA mW ELECTRICAL CHARACTERISTICS
(Ta = 25 Symbol BVCBO BVCEO BVEBO ICBO ICEO *VCE(sat) *VBE(on) *hFE1 *hFE2 fT Min. 80 80 4 50 50 100 Typ. - Test Conditions GSMBTA06 Page: 1/2 ISSUED DATE :2005/08/31 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved.
GTM
