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GSS4501 - POWER MOSFET

General Description

N-CH BVDSS 30V N-CH RDS(ON) 28m N-CH ID 7A P-CH BVDSS -30V N-CH RDS(ON) 50m N-CH ID -5.3A

Key Features

  • Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4.00 8° 0.90 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Ratings N-channel P-channel Unit V V A A A W W/ 30 ±20 7 5.8 20 2.0 0.016.

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Datasheet Details

Part number GSS4501
Manufacturer GTM
File Size 449.70 KB
Description POWER MOSFET
Datasheet download datasheet GSS4501 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/08/24 REVISED DATE :2006/11/09C GSS4501 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET The GSS4501 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. *Simple Drive Requirement *Lower On-resistance *Fast Switching Description N-CH BVDSS 30V N-CH RDS(ON) 28m N-CH ID 7A P-CH BVDSS -30V N-CH RDS(ON) 50m N-CH ID -5.3A Features Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4.00 8° 0.90 0.25 REF. M H L J K G Millimeter Min. Max. 0.