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GT2604 Datasheet PDF

GTM GT2604

The GT2604 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The GT2604 is universally used for all commercial-industrial applications.
Part No. GT2604
Datasheet GT2604 Download
Manufacturer
GTM
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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GT2604 datasheet page 1 preview

DESCRIPTION

*Fast Switching Characteristic *Lower Gate Charge *Small Footprint & Low Profile Package

FEATURES

Package Dimensions REF. A B C D E F Millimeter Min. 2.70 2.60 1.40 0.30 0 0° Max. 3.10 3.00 1.80 0.55 0.10 10° REF. G H I J K L Dimensions Millimeter 1.90 REF. 1.20 REF. 0.12 REF. 0.37 REF. 0.60 REF. 0.95 REF.

ABSOLUTE MAXIMUM RATINGS

Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS@4.5V 3 Continuous Drain Current , VGS@4.5V Pulsed Drain Current1,2 Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a Ratings 30 20 5.5 4.4 20 2 0.016 -55 ~ +150 Ratings 62.5 Unit V V A A A W W/ Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. Unit /W 1/4 ISSUED DATE :2005/05/18 REVISED DATE :

ELECTRICAL CHARACTERISTICS

(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Unless otherwise specified) Min. 30 1.0 Typ.
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