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GT3585 - DUAL-Channel Power MOSFET

Description

N-CH BVDSS 20V N-CH RDS(ON) 75m N-CH ID 3.5A P-CH BVDSS -20V N-CH RDS(ON) 160m N-CH ID -2.5A

Features

  • Low Gate Change.
  • Low On-resistance.
  • RoHS Compliant Package Dimensions REF. A B C D E F Millimeter Min. 2.70 2.60 1.40 0.30 0 0° Max. 3.10 3.00 1.80 0.55 0.10 10° REF. G H I J K L Dimensions Millimeter 1.90 REF. 1.20 REF. 0.12 REF. 0.37 REF. 0.60 REF. 0.95 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Rating.

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Datasheet Details

Part number GT3585
Manufacturer GTM
File Size 447.45 KB
Description DUAL-Channel Power MOSFET
Datasheet download datasheet GT3585 Datasheet

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    www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/02/16 REVISED DATE : GT3585 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET The GT3585 provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. The SOT-26 package is universally used for all commercial-industrial surface mount applications. Description N-CH BVDSS 20V N-CH RDS(ON) 75m N-CH ID 3.5A P-CH BVDSS -20V N-CH RDS(ON) 160m N-CH ID -2.5A Features *Low Gate Change *Low On-resistance *RoHS Compliant Package Dimensions REF. A B C D E F Millimeter Min. 2.70 2.60 1.40 0.30 0 0° Max. 3.10 3.00 1.80 0.55 0.10 10° REF. G H I J K L Dimensions Millimeter 1.90 REF. 1.20 REF. 0.12 REF. 0.37 REF. 0.60 REF. 0.95 REF.
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