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GT6924E - N-CHANNEL MOSFET

Description

Lower on-resistance Fast Switching Characteristic Included Schottky Diode

Features

  • Package Dimensions REF. A B C D E F Millimeter Min. 2.70 2.60 1.40 0.30 0 0° Max. 3.10 3.00 1.80 0.55 0.10 10° REF. G H I J K L Dimensions Millimeter 1.90 REF. 1.20 REF. 0.12 REF. 0.37 REF. 0.60 REF. 0.95 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage (MOSFET) Gate-Source Voltage (MOSFET) Continuous Drain Current3 (MOSFET) 3 Continuous Drain Current (MOSFET) Pulsed Drain Current1 (MOSFET) Reverse Voltage (Schottky) Average Forward Current (Schottky) Pulsed Forward Current1 (S.

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Datasheet Details

Part number GT6924E
Manufacturer GTM
File Size 301.01 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet GT6924E Datasheet
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Full PDF Text Transcription

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www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/01/25 REVISED DATE : GT6924E N-CHANNEL MOSFET WITH SCHOTTKY DIODE BVDSS RDS(ON) ID 20V 600m 1A The GM2306 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. Description *Lower on-resistance *Fast Switching Characteristic *Included Schottky Diode Features Package Dimensions REF. A B C D E F Millimeter Min. 2.70 2.60 1.40 0.30 0 0° Max. 3.10 3.00 1.80 0.55 0.10 10° REF. G H I J K L Dimensions Millimeter 1.90 REF. 1.20 REF. 0.12 REF. 0.37 REF. 0.60 REF. 0.95 REF.
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