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GTT2602 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

Capable of 2.5V gate drive Low on-resistance

Features

  • Package Dimensions REF. A A1 A2 c D E E1 Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 b e e1 Millimeter Min. Max. 0.45 REF. 0.60 REF. 0° 10° 0.30 0.50 0.95 REF. 1.90 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS@4.5V 3 Continuous Drain Current , VGS@4.5V Pulsed Drain Current1,2 Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symb.

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Datasheet preview – GTT2602

Datasheet Details

Part number GTT2602
Manufacturer GTM
File Size 303.05 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet GTT2602 Datasheet
Additional preview pages of the GTT2602 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/03/28 REVISED DATE : GTT2602 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 34m 6.3A The GTT2602 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The GTT2602 is universally used for all commercial-industrial applications. Description *Capable of 2.5V gate drive *Low on-resistance Features Package Dimensions REF. A A1 A2 c D E E1 Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 b e e1 Millimeter Min. Max. 0.45 REF. 0.60 REF. 0° 10° 0.30 0.50 0.95 REF. 1.90 REF.
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