• Part: GTT6405
  • Description: P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Category: MOSFET
  • Manufacturer: GTM
  • Size: 312.73 KB
Download GTT6405 Datasheet PDF
GTM
GTT6405
Description The GTT6405 uses advanced trench technology to provide excellent on-resistance with low gate change. The device is suitable for use as a load switch or in PWM applications. Features - Lower Gate Charge - Ro HS pliant - Small Footprint & Low Profile Package Package Dimensions Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25к ID @TA=70к IDM PD @TA=25к Tj, Tstg Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. Symbol Rthj-a REF. A A1 A2 c D E E1 Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 b e e1 Millimeter Min. Max. 0.45 REF. 0.60 REF. 0° 10° 0.30 0.50 0.95 REF. 1.90 REF. Ratings -30 ±20 -5.0 -4.2 -20 2 0.016 -55 ~ +150 Value 62.5 Unit V V A A A W W/к к Unit к/W Page: 1/4 ISSUED...