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GTT6405 - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GTT6405 uses advanced trench technology to provide excellent on-resistance with low gate change.

The device is suitable for use as a load switch or in PWM applications.

Features

  • Lower Gate Charge.
  • RoHS Compliant.
  • Small Footprint & Low Profile Package Package Dimensions Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25к ID @TA=70к IDM PD @TA=25к Tj, Tstg Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. Symbol Rthj-a REF. A A1.

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Datasheet preview – GTT6405

Datasheet Details

Part number GTT6405
Manufacturer GTM
File Size 312.73 KB
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet GTT6405 Datasheet
Additional preview pages of the GTT6405 datasheet.

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Full PDF Text Transcription

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Pb Free Plating Product ISSUED DATE :2007/01/17 REVISED DATE : GTT6405 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 52m -5.0A Description The GTT6405 uses advanced trench technology to provide excellent on-resistance with low gate change. The device is suitable for use as a load switch or in PWM applications.
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