Datasheet Details
| Part number | GTT6405 |
|---|---|
| Manufacturer | GTM |
| File Size | 312.73 KB |
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
 GTT6405 Datasheet
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General Description
The GTT6405 uses advanced trench technology to provide excellent on-resistance with low gate change.
The device is suitable for use as a load switch or in PWM applications.
Key Features
- Lower Gate Charge.
- RoHS Compliant.
- Small Footprint & Low Profile Package Package Dimensions Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25к ID @TA=70к IDM PD @TA=25к Tj, Tstg Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. Symbol Rthj-a REF. A A1.