• Part: GU75N07
  • Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Category: MOSFET
  • Manufacturer: GTM
  • Size: 319.96 KB
Download GU75N07 Datasheet PDF
GTM
GU75N07
Description The GU75N07 provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all mercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features - Low Gate Charge - Simple Drive Requirement - Fast Switching Characteristics - Ro HS pliant Package Dimensions Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V ID @TC=25к Continuous Drain Current, VGS@10V Pulsed Drain Current1 ID @TC=100к IDM Total Power Dissipation PD @TC=25к Linear Derating Factor Single Pulse Avalanche Energy3 Operating Junction and Storage Temperature Range Tj, Tstg Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-case Rthj-amb REF. A b L4 c L3 L1 E Millimeter Min....