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GU75N07 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

The GU75N07 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Key Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • Fast Switching Characteristics.
  • RoHS Compliant Package Dimensions Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current, VGS@10V ID @TC=25к Continuous Drain Current, VGS@10V Pulsed Drain Current1 ID @TC=100к IDM Total Power Dissipation PD @TC=25к Linear Derating Factor Single Pulse Avalanche Energy3 EAS Operating Junction and Storage Temperature Range Tj, Tst.

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Datasheet Details

Part number GU75N07
Manufacturer GTM
File Size 319.96 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet GU75N07 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Pb Free Plating Product ISSUED DATE :2006/06/06 REVISED DATE : GU75N07 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 75V 11m 80A Description The GU75N07 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.