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GU75N07 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GU75N07 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • Fast Switching Characteristics.
  • RoHS Compliant Package Dimensions Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current, VGS@10V ID @TC=25к Continuous Drain Current, VGS@10V Pulsed Drain Current1 ID @TC=100к IDM Total Power Dissipation PD @TC=25к Linear Derating Factor Single Pulse Avalanche Energy3 EAS Operating Junction and Storage Temperature Range Tj, Tst.

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Datasheet preview – GU75N07

Datasheet Details

Part number GU75N07
Manufacturer GTM
File Size 319.96 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet GU75N07 Datasheet
Additional preview pages of the GU75N07 datasheet.

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Full PDF Text Transcription

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Pb Free Plating Product ISSUED DATE :2006/06/06 REVISED DATE : GU75N07 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 75V 11m 80A Description The GU75N07 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
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