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GU90T03 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features

  • Simple Drive Requirement.
  • Lower On-resistance.
  • Fast Switching Characteristic Package Dimensions REF. A b L4 c L3 L1 E Millimeter REF. Min. Max. 4.40 4.80 c2 0.76 1.00 b2 0.00 0.30 B D 0.36 0.5 e 1.50 REF. L 2.29 2.79 9.80 10.4 L2 Millimeter Min. Max. 1.25 1.45 1.17 1.47 8.6 9.0 2.54 REF. 14.6 15.8 0˚ 8˚ 1.27 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@4.5V Continuous Drain Current, VGS@4.5V Pulsed Drain Current.

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Datasheet preview – GU90T03

Datasheet Details

Part number GU90T03
Manufacturer GTM
File Size 337.96 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet GU90T03 Datasheet
Additional preview pages of the GU90T03 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/03/01 REVISED DATE :2005/12/01B GU90T 03 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 5m 75A The GU90T03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Description Features *Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic Package Dimensions REF. A b L4 c L3 L1 E Millimeter REF. Min. Max. 4.40 4.80 c2 0.76 1.00 b2 0.00 0.30 B D 0.36 0.5 e 1.50 REF. L 2.29 2.79 9.80 10.4 L2 Millimeter Min. Max. 1.25 1.45 1.17 1.47 8.6 9.0 2.
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