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GWS7301E - Dual 20V N-Channel Power MOSFET

Datasheet Summary

Description

The GWS7301E is a dual low threshold gate protected MOFET designed for the small battery, cell phone, and PDA markets.

Features

  • 6.5A, 20V rDS(ON) = 18mΩ typ. at 4.5 Volts.
  • 5.5A, 20V rDS(ON) = 25mΩ typ. at 2.5 Volts.
  • Excellent thermal characteristics.
  • Rated for High Electrical Overstress Performance of 15A short circuit and over current.
  • Integrated gate diodes provide Electro-Static Discharge (ESD) protection of 2500V HBM. Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted) Parameter Symbol 10 secs VDS Drain-Source Voltage VGS Gate-Source Voltage o T.

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Datasheet Details

Part number GWS7301E
Manufacturer GWS
File Size 391.34 KB
Description Dual 20V N-Channel Power MOSFET
Datasheet download datasheet GWS7301E Datasheet
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GWS7301E www.DataSheet4U.com GWS7301E – Dual 20V N-Channel Power MOSFET S1 General Description The GWS7301E is a dual low threshold gate protected MOFET designed for the small battery, cell phone, and PDA markets. Using ultra high density MOSFET process and space saving small outline Jlead package, performance normally found in a TSSOP8 footprint has been squeezed into the footprint of a TSOP6 package. G1 G2 S2 Features • 6.5A, 20V rDS(ON) = 18mΩ typ. at 4.5 Volts • 5.5A, 20V rDS(ON) = 25mΩ typ. at 2.5 Volts • Excellent thermal characteristics. • Rated for High Electrical Overstress Performance of 15A short circuit and over current. • Integrated gate diodes provide Electro-Static Discharge (ESD) protection of 2500V HBM.
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