GS-065-004-1-L Datasheet PDF - GaN Systems 650V E-mode GaN transistor Specs

GS-065-004-1-L - 650V E-mode GaN transistor

Datasheet Summary

Description

The GS-065-004-1-L is an enhancement mode GaN-onSilicon power transistor.

The properties of GaN allow for high current, high voltage breakdown and high switching frequency.

Features

650 V enhancement mode power transistor.
850 V transient drain-to-source voltage.
Bottom-cooled, small 5x6 mm PDFN package.
RDS(on) = 450 mΩ.
IDSmax,DC = 4 A / IDSmax,Pulse = 7.1 A.
Ultra-low FOM.
Simple gate drive requirements (0 V to 6 V).
Transient tolerant gate drive (-20 V / +10 V).
High switching frequency (> 1 MHz).
Fast and controllable fall and rise times.
Reverse conduction capability.

Datasheet Details

Part number	GS-065-004-1-L
Manufacturer	GaN Systems
File Size	1.08 MB
Description	650V E-mode GaN transistor
Datasheet	GS-065-004-1-L Datasheet
Additional preview pages of the GS-065-004-1-L datasheet.

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Full PDF Text Transcription

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Please note that GaN Systems is an Infineon Technologies Company The document following this cover page is marked as “GaN Systems” document as this is the company that originally developed the product. Please note that Infineon will continue to offer the product to new and existing customers as part of the Infineon product portfolio. Continuity of document content The fact that Infineon offers the following product as part of the Infineon product portfolio does not lead to any changes to this document. Future revisions will occur when appropriate, and any changes will be set out on the document history page. Continuity of ordering part numbers Infineon continues to support existing part numbers. Please continue to use the ordering part numbers listed in the datasheet for ordering.

Published: Apr 1, 2024 |