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GS-065-008-1-L - 650V E-mode GaN transistor

Datasheet Summary

Description

The GS-065-008-1-L is an enhancement mode GaNon-Silicon power transistor.

The properties of GaN allow for high current, high voltage breakdown and high switching frequency.

Features

  • 650 V enhancement mode power transistor.
  • 850 V transient drain-to-source voltage.
  • Bottom-cooled, small 5x6 mm PDFN package.
  • RDS(on) = 225 mΩ.
  • IDSmax,DC= 8 A / IDSmax,Pulse = 13.5 A.
  • Ultra-low FOM.
  • Simple gate drive requirements (0 V to 6 V).
  • Transient tolerant gate drive (-20 V / +10 V).
  • High switching frequency (> 1 MHz).
  • Fast and controllable fall and rise times.
  • Reverse conduction capability.

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Datasheet Details

Part number GS-065-008-1-L
Manufacturer GaN Systems
File Size 1.00 MB
Description 650V E-mode GaN transistor
Datasheet download datasheet GS-065-008-1-L Datasheet
Additional preview pages of the GS-065-008-1-L datasheet.

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Full PDF Text Transcription

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Features • 650 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 225 mΩ • IDSmax,DC= 8 A / IDSmax,Pulse = 13.
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