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BL055N06T-5DL8 - N-Channel Enhancement Mode MOSFET

Key Features

  • Super low gate charge.
  • Green device available.
  • Excellent cdV / dt effect decline.
  • Advanced high cell density trench technology Mechanical Data.
  • Case: PDFN5×6-8L.
  • Molding Compound: UL Flammability Classification Rating 94V-0.
  • Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 PDFN5×6-8L Ordering Information Part Number BL055N06T-5DL8 Package PDFN5×6-8L Shipping Quantity 5000 pcs / Tape & Reel Marking Code 055N06T Maximum Rating.

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N-Channel Enhancement Mode MOSFET BL055N06T-5DL8 Features  Super low gate charge  Green device available  Excellent cdV / dt effect decline  Advanced high cell density trench technology Mechanical Data  Case: PDFN5×6-8L  Molding Compound: UL Flammability Classification Rating 94V-0  Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 PDFN5×6-8L Ordering Information Part Number BL055N06T-5DL8 Package PDFN5×6-8L Shipping Quantity 5000 pcs / Tape & Reel Marking Code 055N06T Maximum Ratings (@ TA = 25°C unless otherwise specified) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (TC = 25°C silicon limited) Continuous Drain Current (TC = 100°C) Pulsed Drain Current （tp=10us） Single Pulse Avalanche Energy *3 Symbol VDSS V