BL055N06T-5DL8 Datasheet | Galaxy Microelectronics

N-Channel Enhancement Mode MOSFET BL055N06T-5DL8 Features - Super low gate charge - Green device available - Excellent cd V / dt effect decline - Advanced high cell density trench technology Mechanical Data - Case: PDFN5×6-8L - Molding pound: UL Flammability Classification Rating 94V-0 - Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 PDFN5×6-8L Ordering Information Part Number BL055N06T-5DL8 Package PDFN5×6-8L Shipping Quantity 5000 pcs / Tape & Reel Marking Code 055N06T Maximum Ratings (@ TA = 25°C unless otherwise specified) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (TC = 25°C silicon limited) Continuous Drain Current (TC = 100°C) Pulsed Drain Current （tp=10us） Single Pulse Avalanche Energy - 3 Symbol VDSS VGSS IDM EAS Value 60 ±20 115 74 160 80 Unit V V A A A m J Thermal Characteristics Parameter Power Dissipation (TC = 25°C) Thermal Resistance Junction-to-Case - 4 Thermal Resistance Junction-to-Air - 1 Operating Junction Temperature Range Storage Temperature Range Symbol PD RθJC RθJA TJ TSTG Value 125 1...