• Part: TBL13P06-3DL8
  • Description: P-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: Galaxy Microelectronics
  • Size: 699.55 KB
Download TBL13P06-3DL8 Datasheet PDF
Galaxy Microelectronics
TBL13P06-3DL8
Features - High power and current handing capability - JESD22-A114-B ESD rating of class 1C per human body model - Halogen free - Qualified to AEC-Q101 standards for high reliability Typical Applications - Load switch - Power management functions - PWM Applications Mechanical Data - Case: PDFN3×3-8L - Molding pound, UL Flammability Classification Rating 94V-0 - Terminals: Matte Tin Plated Leads, Solderable Per MIL-STD-202, Method 208 PDFN3×3-8L Ordering Information Part Number TBL13P06-3DL8 Package PDFN3×3-8L Shipping Quantity 5000 pcs / Tape & Reel Marking Code 13P06 Maximum Ratings (@ TC = 25°C unless otherwise specified) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (TC = 25°C) Continuous Drain Current (TC = 100°C) Continuous Drain Current (TA = 25°C) - 1 Continuous Drain Current (TA = 100°C) - 1 Pulsed Drain Current (tp = 10μs, TA = 25°C) Single Pulse Avalanche Energy - 4 Power Dissipation (TC = 25°C) Operating Junction Temperature Range...