Download TBL950P10D Datasheet PDF
TBL950P10D page 2
Page 2
TBL950P10D page 3
Page 3

TBL950P10D Description

P-Channel Enhancement Mode MOSFET TBL950P10D.

TBL950P10D Key Features

  • Super low gate charge
  • 100% EAS guaranteed
  • Excellent CdV/dt effect decline
  • Advanced high cell density Trench technology
  • Halogen free
  • Qualified to AEC-Q101 standards for high reliability
  • Case: TO-252
  • Molding pound: UL Flammability Classification Rating 94V-0
  • Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208
  • ±100 nA