• Part: TBL950P10D
  • Description: P-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: Galaxy Microelectronics
  • Size: 507.67 KB
Download TBL950P10D Datasheet PDF
Galaxy Microelectronics
TBL950P10D
Features - Super low gate charge - 100% EAS guaranteed - Excellent Cd V/dt effect decline - Advanced high cell density Trench technology - Halogen free - Qualified to AEC-Q101 standards for high reliability Mechanical Data - Case: TO-252 - Molding pound: UL Flammability Classification Rating 94V-0 - Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 TO-252 Ordering Information Part Number TBL950P10D Package TO-252 Shipping Quantity 80 pcs / Tube or 2500 pcs / Tape & Reel Marking Code 950P10D Maximum Ratings (@ TA = 25°C unless otherwise specified) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (TC = 25°C) - 1 Continuous Drain Current (TC = 100°C) - 1 Pulsed Drain Current - 2 Single Pulse Avalanche Energy - 3 Symbol VDSS VGSS IDM EAS Value -100 ±20 -30 -21 -52 110 Unit V V A A A m J Thermal Characteristics Parameter Power Dissipation (TC = 25°C) Thermal Resistance Junction-to-Case Operating Junction Temperature...