• Part: TGBLN4401-5DL8
  • Description: Dual N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: Galaxy Microelectronics
  • Size: 671.12 KB
Download TGBLN4401-5DL8 Datasheet PDF
Galaxy Microelectronics
TGBLN4401-5DL8
Features - Ultra-low on-resistance and gate-charge - Advanced shielded-gate technology - Halogen free - Qualified to AEC-Q101 standards for high reliability Mechanical Data - Case: PDFN5×6-8LC - Molding pound: UL Flammability Classification Rating 94V-0 - Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 PDFN5×6-8LC Ordering Information Part Number TGBLN4401-5DL8 Package PDFN5×6-8LC Shipping Quantity 5000 pcs / Tape & Reel Marking Code GBLN4401 Maximum Ratings (@ TA = 25°C unless otherwise specified) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (TC = 25°C) - 1 Continuous Drain Current (TC = 100°C) - 1 Continuous Drain Current (TA = 25°C) - 2, 3 Continuous Drain Current (TA = 100°C) - 2, 3 Pulsed Drain Current - 4 Single Pulse Avalanche Energy - 5, 6 Symbol VDSS VGSS IDM EAS Value 40 ±20 48 31 14 9 180 11 Unit V V A A A A A m J Thermal Characteristics Parameter Power Dissipation (TC = 25°C) Thermal Resistance...