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TGBLN4401-5DL8 Datasheet

Manufacturer: Galaxy Microelectronics
TGBLN4401-5DL8 datasheet preview

Datasheet Details

Part number TGBLN4401-5DL8
Datasheet TGBLN4401-5DL8-GalaxyMicroelectronics.pdf
File Size 671.12 KB
Manufacturer Galaxy Microelectronics
Description Dual N-Channel Enhancement Mode Power MOSFET
TGBLN4401-5DL8 page 2 TGBLN4401-5DL8 page 3

TGBLN4401-5DL8 Overview

Dual N-Channel Enhancement Mode Power MOSFE TGBLN4401-5DLT8.

TGBLN4401-5DL8 Key Features

  • Ultra-low on-resistance and gate-charge
  • Advanced shielded-gate technology
  • Halogen free
  • Qualified to AEC-Q101 standards for high reliability
  • Case: PDFN5×6-8LC
  • Molding pound: UL Flammability Classification Rating 94V-0
  • Terminals: Matte tin-plated leads; solderability-per MIL-STD-202
  • 55 ~ +150 -55 ~ +150
  • ±100 nA
  • 6.8 7.5 mΩ
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TGBLN6601-5DL8 Dual N-Channel Enhancement Mode MOSFET

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