TGBLN4401-5DL8 Description
Dual N-Channel Enhancement Mode Power MOSFE TGBLN4401-5DLT8.
TGBLN4401-5DL8 Key Features
- Ultra-low on-resistance and gate-charge
- Advanced shielded-gate technology
- Halogen free
- Qualified to AEC-Q101 standards for high reliability
- Case: PDFN5×6-8LC
- Molding pound: UL Flammability Classification Rating 94V-0
- Terminals: Matte tin-plated leads; solderability-per MIL-STD-202
- 55 ~ +150 -55 ~ +150
- ±100 nA
- 6.8 7.5 mΩ