GMA2822M
GMA2822M is Dual Low-voltage Power Amplifier manufactured by Gamma Microelectronics.
DESCRIPTION
PIN 1 2 3 4 5 6 7 8 INPUT INPUT INPUT INPUT OUTPUT I/O OUTPUT NAME
OUTPUT (1) SUPPLY VOLTAGE OUTPUT (2) GROUND INPUT -(2) INPUT +(2) INPUT -(1) INPUT +(1)
ABSOLUTE MAXIMUM RATINGS
PARAMETER Supply Voltage Peak Output Current Total Power Dissipation at TA=50°C otal Power Dissipation at TEASE=50°C Storage Temperature Junction Temperature SYMBOL VS IO PLOT PLOT TSTG TJ VALUE 15
1 1 1.4 -40 +150
UNIT V
A W W °C °C
Revision 1, May 2002
.gammamicro.
PRELIMINARY
DUAL LOW-VOLTAGE POWER AMPLIFIER
ELECTRICAL CHARACTERISTICS (VS=6V, TA=25°C, unless otherwise specified )
CHARACTERISTICS
S TE R E O
SYMBOL
TEST CONDITIONS
UNIT
Supply Voltage Quiscent Output Voltage Quiscent Drain Current Input Bias Current
VS VO ID IB
V S = 3V RL=32Ω , V S = 9V V S = 6V VS = 4.5V V S = 3V V S = 2V V S = 6V V S = 9V V S = 6V V S = 6V VS = 4.5V V S = 3V
1.8 2.7 1.2 6 100 90 15 170 300 450 300 120 60 20 5 220 1000 380 650 320 110 0.2 0.2 0.2 36 39
9 m A n A
..
Output Power (each channel) f=1k Hz, d=10%
RL=16Ω , RL=8Ω , RL=4Ω , m W
Distortion (f=1k Hz) Closed Loop Voltage Gain Channel Balance Input Resistance Total Input Noise Supply Voltage Rejection Channel Separation BRI DGE Supply Voltage Quiscent Drain Current Output Offset Voltage (between the outputs) Input Bias Current d GV ∆GV RI
RL=32Ω , PO = 40m W RL=16Ω , PO = 75m W RL=8Ω , PO = 150m W f=1k Hz f=1k Hz RS=10kΩ , B = Curve A B = 22Hz to 22k Hz 24 100
% 41 ±1 d B d B kΩ
θN
SVR CS VS ID VOS IB
2 2.5 30 50
µV d B d B f=100Hz, C1=C2=100 µF f=1k Hz
RL=∞ RL=8Ω RL=32Ω , V S = 9V V S = 6V VS = 4.5V V S = 3V V S = 2V V S = 9V V S = 6V V S = 3V V S = 6V VS = 4.5V V S = 3V VS = 4.5V V S = 3V V S =...