GE5N20V Datasheet N-channel MOSFET

Manufacturer: Gemos

Overview: GEMOS www.DataSheet4U.com MOS FIELD EFFECT TRANSISTOR GE5N20V N-CHANNEL MOS FIELD EFFECT.

Datasheet Details

Part number	GE5N20V
Manufacturer	Gemos
File Size	301.50 KB
Description	N-Channel MOSFET
Datasheet	GE5N20V_Gemos.pdf

General Description

The GE5N20V uses advanced trench technology to provide excellent RDS(ON), rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

This device is suitable for use as a Battery protection or in other Switching application.

Schematic diagram GENERAL

Key Features

RDS(ON) < 36mΩ @ VGS=2.7V RDS(ON) < 27.5mΩ @ VGS=4.5V.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package.
VDS = 20V,ID = 5A Marking and pin Assignment.

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