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1N1183 - Silicon Standard Recovery Diode

Key Features

  • High Surge Capability.
  • Types from 50 to 300 V VRRM.
  • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N1183 thru 1N1187R VRRM = 50 V - 300 V IF = 35 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N1183 (R) 1N1184 (R) 1N1186 (R) 1N1187 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current.

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Datasheet Details

Part number 1N1183
Manufacturer GeneSiC
File Size 697.84 KB
Description Silicon Standard Recovery Diode
Datasheet download datasheet 1N1183 Datasheet

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Other Datasheets by GeneSiC

Part Number Description
1N1183A Silicon Standard Recovery Diode
1N1183AR Silicon Standard Recovery Diode
1N1183R Silicon Standard Recovery Diode
1N1184 Silicon Standard Recovery Diode
1N1184A Silicon Standard Recovery Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon Standard Recovery Diode Features • High Surge Capability • Types from 50 to 300 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N1183 thru 1N1187R VRRM = 50 V - 300 V IF = 35 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N1183 (R) 1N1184 (R) 1N1186 (R) 1N1187 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 140 °C TC = 25 °C, tp = 8.