1N1183R - Silicon Standard Recovery Diode

This page provides the datasheet information for the 1N1183R, a member of the 1N1183 Silicon Standard Recovery Diode family.

Product Overview

GeneSiC

Part number	1N1183R
Manufacturer	GeneSiC
File Size	697.84 KB
Description	Silicon Standard Recovery Diode
Datasheet	1N1183R Datasheet
Additional preview pages of the 1N1183R datasheet.

High Surge Capability.
Types from 50 to 300 V VRRM.
Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N1183 thru 1N1187R VRRM = 50 V - 300 V IF = 35 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N1183 (R) 1N1184 (R) 1N1186 (R) 1N1187 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current.

1N1183R - Silicon Standard Recovery Diode (America Semiconductor)
1N1183R - Standard Recovery Diode (Naina Semiconductor)
1N1183 - STANDARD RECOVERY RECTIFIERS (Digitron Semiconductors)
1N1183 - Silicon-Power Rectifiers (Diotec Semiconductor)
1N1183 - 35/40/and 60 Amp Power Silicon Rectifier Diodes (International Rectifier)
1N1183 - Power Silicon Rectifier Diodes (Vishay)
1N1183 - Silicon Standard Recovery Diode (America Semiconductor)
1N1183 - Silicon Power Rectifier (Microsemi)
1N1183 - Standard Recovery Diode (Naina Semiconductor)
1N1183A - STANDARD RECOVERY RECTIFIERS (Digitron Semiconductors)

Other Datasheets by GeneSiC

Published: Feb 3, 2016 |