Download the 1N1189 datasheet PDF.
This datasheet also covers the 1N1188 variant, as both devices belong to the same silicon standard recovery diode family and are provided as variant models within a single manufacturer datasheet.
Key Features
High Surge Capability.
Types from 400 to 600 V VRRM.
Not ESD Sensitive
Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N1188 thru 1N1190R
VRRM = 400 V - 600 V IF = 35 A
AC
DO-5 Package
CA Stud Stud
(R)
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
1N1188 (R)
1N1189 (R)
Repetitive peak reverse voltage RMS reverse voltage DC blocki.
Full PDF Text Transcription for 1N1189 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
1N1189. For precise diagrams, and layout, please refer to the original PDF.
Silicon Standard Recovery Diode Features • High Surge Capability • Types from 400 to 600 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Revers...
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t ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N1188 thru 1N1190R VRRM = 400 V - 600 V IF = 35 A AC DO-5 Package CA Stud Stud (R) Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N1188 (R) 1N1189 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 140 °C TC = 25 °C, tp = 8.
1N1189 Datasheet
