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1N3208 - Silicon Standard Recovery Diode

Key Features

  • High Surge Capability.
  • Types from 50 V to 300 V VRRM.
  • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N3208 thru 1N3211R VRRM = 50 V - 300 V IF = 15 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N3208 (R) 1N3209 (R) 1N3210 (R) 1N3211 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward curren.

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Datasheet Details

Part number 1N3208
Manufacturer GeneSiC
File Size 650.37 KB
Description Silicon Standard Recovery Diode
Datasheet download datasheet 1N3208 Datasheet

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Other Datasheets by GeneSiC

Part Number Description
1N3208R Silicon Standard Recovery Diode
1N3209 Silicon Standard Recovery Diode
1N3209R Silicon Standard Recovery Diode
1N3210 Silicon Standard Recovery Diode
1N3210R Silicon Standard Recovery Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon Standard Recovery Diode Features • High Surge Capability • Types from 50 V to 300 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N3208 thru 1N3211R VRRM = 50 V - 300 V IF = 15 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N3208 (R) 1N3209 (R) 1N3210 (R) 1N3211 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 150 °C TC = 25 °C, tp = 8.