1N3212R - Silicon Standard Recovery Diode

This page provides the datasheet information for the 1N3212R, a member of the 1N3212 Silicon Standard Recovery Diode family.

Product Overview

GeneSiC

Part number	1N3212R
Manufacturer	GeneSiC
File Size	682.60 KB
Description	Silicon Standard Recovery Diode
Datasheet	1N3212R Datasheet
Additional preview pages of the 1N3212R datasheet.

High Surge Capability.
Types from 400 V to 600 V VRRM.
Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N3212 thru 1N3214R VRRM = 400 V - 600 V IF = 15 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N3212 (R) 1N3213 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous.

1N3212R - STANDARD RECOVERY DIODE (DACO SEMICONDUCTOR)
1N3212R - 15 Amp Stud-mounted Silicon Rectifier Diodes (International Rectifier)
1N3212R - Silicon Standard Recovery Diode (America Semiconductor)
1N3212 - Silicon Rectifier Diodes (Vishay)
1N3212 - STANDARD RECOVERY DIODE (DACO SEMICONDUCTOR)
1N3212 - 15 Amp Stud-mounted Silicon Rectifier Diodes (International Rectifier)
1N3212 - Silicon Standard Recovery Diode (America Semiconductor)
1N3212 - STANDARD RECOVERY RECTIFIERS (Digitron Semiconductors)
1N3210 - Silicon Rectifier Diodes (Vishay)
1N3210 - 15 Amp Stud-mounted Silicon Rectifier Diodes (International Rectifier)

Other Datasheets by GeneSiC

Published: Jun 2, 2017 |