1N3671AR - Silicon Standard Recovery Diode

This page provides the datasheet information for the 1N3671AR, a member of the 1N3671A Silicon Standard Recovery Diode family.

Product Overview

GeneSiC

Part number	1N3671AR
Manufacturer	GeneSiC
File Size	776.04 KB
Description	Silicon Standard Recovery Diode
Datasheet	1N3671AR Datasheet
Additional preview pages of the 1N3671AR datasheet.

High Surge Capability.
Types from 800 V to 1000 V VRRM.
Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N3671A thru 1N3673AR VRRM = 800 V - 1000 V IF = 12 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current,.

1N3671AR - Silicon Standard Recovery Diode (America Semiconductor)
1N3671A - Medium Power Silicon Rectifier Diodes (Vishay)
1N3671A - POWER RECTIFIER (Solid State)
1N3671A - Silicon Rectifiers (ETC)
1N3671A - STANDARD RECOVERY RECTIFIER (Digitron Semiconductors)
1N3671A - (1N3670A - 1N3673A) 12 AMP MEDIUM POWER SILICON RECTIFIER DIODES (International Rectifier)
1N3671A - Silicon Standard Recovery Diode (America Semiconductor)
1N3671 - Silicon-Power Rectifiers (Diotec Semiconductor)
1N3671 - POWER RECTIFIER (Solid State)
1N3671 - STANDARD RECOVERY RECTIFIER (Digitron Semiconductors)

Other Datasheets by GeneSiC

Published: Aug 7, 2018 |