1N3767 - Silicon Standard Recovery Diode

This page provides the datasheet information for the 1N3767, a member of the 1N3765 Silicon Standard Recovery Diode family.

Product Overview

GeneSiC

Part number	1N3767
Manufacturer	GeneSiC
File Size	698.83 KB
Description	Silicon Standard Recovery Diode
Datasheet	1N3767 Datasheet
Additional preview pages of the 1N3767 datasheet.

High Surge Capability.
Types from 700 V to 1000 V VRRM.
Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N3765 thru 1N3768R VRRM = 700 V - 1000 V IF = 35 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N3765 (R) 1N3766 (R) 1N3767 (R) 1N3768 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward cu.

1N3767 - STANDARD RECOVERY RECTIFIERS (Digitron Semiconductors)
1N3767 - 35/40/and 60 Amp Power Silicon Rectifier Diodes (International Rectifier)
1N3767 - Silicon Power Rectifier (Microsemi)
1N3767 - Silicon Standard Recovery Diode (America Semiconductor)
1N3767R - Silicon Standard Recovery Diode (America Semiconductor)
1N3765 - STANDARD RECOVERY RECTIFIERS (Digitron Semiconductors)
1N3765 - 35/40/and 60 Amp Power Silicon Rectifier Diodes (International Rectifier)
1N3765 - Silicon Power Rectifier (Microsemi)
1N3765 - Power Silicon Rectifier Diodes (Vishay)
1N3765 - Silicon Standard Recovery Diode (America Semiconductor)

Other Datasheets by GeneSiC

Published: Feb 3, 2016 |