Datasheet4U Logo Datasheet4U.com

1N3890 - Silicon Fast Recovery Diode

Download the 1N3890 datasheet PDF. This datasheet also covers the 1N3889 variant, as both devices belong to the same silicon fast recovery diode family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High Surge Capability.
  • Types up to 400 V VRRM.
  • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N3889 thru 1N3893R VRRM = 50 V - 400 V IF = 12 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N3889 (R) 1N3890 (R) 1N3891 (R) 1N3892 (R) 1N3893 (R) Unit Repetitive peak reverse voltage RMS reverse voltage DC.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (1N3889-GeneSiC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 1N3890
Manufacturer GeneSiC
File Size 720.16 KB
Description Silicon Fast Recovery Diode
Datasheet download datasheet 1N3890 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
1N3890 FAST RECOVERY RECTIFIER Digitron Semiconductors
1N3890 FAST RECOVERY DIODES International Rectifier
1N3890 FAST RECOVERY RECTIFIERS Microsemi
1N3890 Silicon Rectifier Freescale
1N3890 (1N3879 - 1N3893) Fast Recovery Diodes Vishay Siliconix

Other Datasheets by GeneSiC

Part Number Description
1N3890R Silicon Fast Recovery Diode
1N3891 Silicon Fast Recovery Diode
1N3891R Silicon Fast Recovery Diode
1N3892 Silicon Fast Recovery Diode
1N3892R Silicon Fast Recovery Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon Fast Recovery Diode Features • High Surge Capability • Types up to 400 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N3889 thru 1N3893R VRRM = 50 V - 400 V IF = 12 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N3889 (R) 1N3890 (R) 1N3891 (R) 1N3892 (R) 1N3893 (R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current VRRM VRMS VDC IF TC ≤ 100 °C 50 100 200 300 400 V 35 70 140 280 420 V 50 100 200 400 600 V 12 12 12 12 12 A Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature IF,SM TC = 25 °C, tp = 8.