Datasheet4U Logo Datasheet4U.com

1N3892R - Silicon Fast Recovery Diode

This page provides the datasheet information for the 1N3892R, a member of the 1N3889 Silicon Fast Recovery Diode family.

Datasheet Summary

Features

  • High Surge Capability.
  • Types up to 400 V VRRM.
  • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N3889 thru 1N3893R VRRM = 50 V - 400 V IF = 12 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N3889 (R) 1N3890 (R) 1N3891 (R) 1N3892 (R) 1N3893 (R) Unit Repetitive peak reverse voltage RMS reverse voltage DC.

📥 Download Datasheet

Datasheet preview – 1N3892R

Datasheet Details

Part number 1N3892R
Manufacturer GeneSiC
File Size 720.16 KB
Description Silicon Fast Recovery Diode
Datasheet download datasheet 1N3892R Datasheet
Additional preview pages of the 1N3892R datasheet.
Other Datasheets by GeneSiC

Full PDF Text Transcription

Click to expand full text
Silicon Fast Recovery Diode Features • High Surge Capability • Types up to 400 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N3889 thru 1N3893R VRRM = 50 V - 400 V IF = 12 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N3889 (R) 1N3890 (R) 1N3891 (R) 1N3892 (R) 1N3893 (R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current VRRM VRMS VDC IF TC ≤ 100 °C 50 100 200 300 400 V 35 70 140 280 420 V 50 100 200 400 600 V 12 12 12 12 12 A Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature IF,SM TC = 25 °C, tp = 8.
Published: |