• Part: 1N5827
  • Description: Silicon Power Schottky Diode
  • Category: Diode
  • Manufacturer: GeneSiC
  • Size: 875.11 KB
Download 1N5827 Datasheet PDF
GeneSiC
1N5827
1N5827 is Silicon Power Schottky Diode manufactured by GeneSiC.
- Part of the 1N5826 comparator family.
Features - High Surge Capability - Types from 20 V to 40 V VRRM - Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N5826 thru 1N5828R VRRM = 20 V - 40 V IF = 15 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N5826 (R) 1N5827 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF,SM Tj Tstg TC ≤ 100 °C TC = 25 °C, tp = 8.3 ms 20 14 20 15 -55 to 150 -55 to 150 30 21 30 15 -55 to 150 -55 to 150 Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N5826 (R) Diode forward voltage Reverse current Thermal characteristics Thermal resistance, junction case VF IF...