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1N5827R - Silicon Power Schottky Diode

Download the 1N5827R datasheet PDF. This datasheet also covers the 1N5826 variant, as both devices belong to the same silicon power schottky diode family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High Surge Capability.
  • Types from 20 V to 40 V VRRM.
  • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N5826 thru 1N5828R VRRM = 20 V - 40 V IF = 15 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N5826 (R) 1N5827 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous for.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (1N5826-GeneSiC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 1N5827R
Manufacturer GeneSiC
File Size 875.11 KB
Description Silicon Power Schottky Diode
Datasheet download datasheet 1N5827R Datasheet

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Other Datasheets by GeneSiC

Part Number Description
1N5827 Silicon Power Schottky Diode
1N5826 Silicon Power Schottky Diode
1N5826R Silicon Power Schottky Diode
1N5828 Silicon Power Schottky Diode
1N5828R Silicon Power Schottky Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon Power Schottky Diode Features • High Surge Capability • Types from 20 V to 40 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N5826 thru 1N5828R VRRM = 20 V - 40 V IF = 15 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N5826 (R) 1N5827 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 100 °C TC = 25 °C, tp = 8.