Download the 1N5828 datasheet PDF.
This datasheet also covers the 1N5826 variant, as both devices belong to the same silicon power schottky diode family and are provided as variant models within a single manufacturer datasheet.
Key Features
High Surge Capability.
Types from 20 V to 40 V VRRM.
Not ESD Sensitive
Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N5826 thru 1N5828R
VRRM = 20 V - 40 V IF = 15 A
DO-4 Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
1N5826 (R)
1N5827 (R)
Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous for.
Full PDF Text Transcription for 1N5828 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
1N5828. For precise diagrams, and layout, please refer to the original PDF.
Silicon Power Schottky Diode Features • High Surge Capability • Types from 20 V to 40 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse p...
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SD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N5826 thru 1N5828R VRRM = 20 V - 40 V IF = 15 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N5826 (R) 1N5827 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 100 °C TC = 25 °C, tp = 8.
1N5828 Datasheet
