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1N5834 - Silicon Power Schottky Diode

Download the 1N5834 datasheet PDF. This datasheet also covers the 1N5832 variant, as both devices belong to the same silicon power schottky diode family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High Surge Capability.
  • Types from 20 V to 40V VRRM.
  • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N5832 thru 1N5834R VRRM = 20 V - 40 V IF(AV) = 40 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N5832 (R) 1N5833 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating t.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (1N5832-GeneSiC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 1N5834
Manufacturer GeneSiC
File Size 326.17 KB
Description Silicon Power Schottky Diode
Datasheet download datasheet 1N5834 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon Power Schottky Diode Features • High Surge Capability • Types from 20 V to 40V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base.