• Part: 1N6095
  • Description: Silicon Power Schottky Diode
  • Category: Diode
  • Manufacturer: GeneSiC
  • Size: 0.99 MB
Download 1N6095 Datasheet PDF
GeneSiC
1N6095
1N6095 is Silicon Power Schottky Diode manufactured by GeneSiC.
Features - High Surge Capability - Types from 30 V to 40V VRRM - Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N6095 thru 1N6096R VRRM = 30 V - 40 V IF = 25 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N6095 (R) 1N6096 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF,SM Tj Tstg TC ≤ 100 °C TC = 25 °C, tp = 8.3 ms 30 21 30 25 -55 to 150 -55 to 150 40 28 40 25 -55 to 150 -55 to 150 Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N6095 (R) Diode forward voltage Reverse current Thermal characteristics Thermal resistance, junction case VF IF...