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1N6096R - Silicon Power Schottky Diode

This page provides the datasheet information for the 1N6096R, a member of the 1N6095 Silicon Power Schottky Diode family.

Datasheet Summary

Features

  • High Surge Capability.
  • Types from 30 V to 40V VRRM.
  • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N6095 thru 1N6096R VRRM = 30 V - 40 V IF = 25 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N6095 (R) 1N6096 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forw.

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Datasheet preview – 1N6096R

Datasheet Details

Part number 1N6096R
Manufacturer GeneSiC
File Size 0.99 MB
Description Silicon Power Schottky Diode
Datasheet download datasheet 1N6096R Datasheet
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Full PDF Text Transcription

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Silicon Power Schottky Diode Features • High Surge Capability • Types from 30 V to 40V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N6095 thru 1N6096R VRRM = 30 V - 40 V IF = 25 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N6095 (R) 1N6096 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 100 °C TC = 25 °C, tp = 8.
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