2N7639-GA Key Features
- 225°C maximum operating temperature
- Electrically Isolated Base Plate
- Gate Oxide Free SiC Switch
- Exceptional Safe Operating Area
- Excellent Gain Linearity
- Temperature Independent Switching Performance
- Low Output Capacitance
- Positive Temperature Coefficient of RDS,ON
- Suitable for Connecting an Anti-parallel Diode
- patible with Si MOSFET/IGBT Gate Drive ICs