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Device under development
A-GA10JT12
Normally – OFF Silicon Carbide Super Junction Transistor
VDS I
D
RDS(ON)
= 1200 V
= 7A = 220 mȍ
Features
• 225 oC maximum operating temperature •Best in class temperature independent switching
and blocking performance • Lowest VDS(ON) as compared to any other SiC switch •Suitable for connecting an anti-parallel diode •Gate oxide free SiC switch •Positive temperature coefficient for easy paralleling •Low gate charge •Low intrinsic capacitance
Advantages
• Low switching losses •Higher efficiency
Package
D
G
S
Applications
• Ideal for Aerospace and Defense Applications •Down Hole Oil Drilling, Geothermal Instrumentation •Hybrid Electric Vehicles (HEV) •Solar Inverters • Switched-Mode Power Supply (SMPS) •Power Factor Correction (PFC) • In
A-GA10JT12 Datasheet
