A-GA10JT12 Overview
Key Features
- 225 oC maximum operating temperature
- Best in class temperature independent switching and blocking performance
- Lowest VDS(ON) as compared to any other SiC switch
- Suitable for connecting an anti-parallel diode
- Gate oxide free SiC switch
- Positive temperature coefficient for easy paralleling
- Low gate charge
- Low intrinsic capacitance Advantages
- Low switching losses
- Higher efficiency Package D G S