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FST100150 - Silicon Power Schottky Diode

Key Features

  • High Surge Capability.
  • Types from 150 V to 200V VRRM.
  • Isolated to Plate.
  • Not ESD Sensitive FST100150 thru FST100200 VRRM = 150 V - 200 V IF(AV) = 100 A TO-249AB Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg FST100150 150 106 150 -55 to 150 -55 to 150 Electrical charact.

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Datasheet Details

Part number FST100150
Manufacturer GeneSiC
File Size 598.16 KB
Description Silicon Power Schottky Diode
Datasheet download datasheet FST100150 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon Power Schottky Diode Features • High Surge Capability • Types from 150 V to 200V VRRM • Isolated to Plate • Not ESD Sensitive FST100150 thru FST100200 VRRM = 150 V - 200 V IF(AV) = 100 A TO-249AB Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg FST100150 150 106 150 -55 to 150 -55 to 150 Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions FST100150 Average forward current (per pkg) Peak forward surge current (per leg) Maximum instantaneous forward voltage (per leg) Maximum Instantaneous reverse current at rated DC blocking voltage (per leg) The