GeneSiC FST100200
Silicon Power Schottky Diode
| Part No. | FST100200 |
|---|---|
| Datasheet | FST100200 Download |
| Manufacturer |  GeneSiC |
| Description | Silicon Power Schottky Diode |
| Buy | Stock & Price |
FEATURES
● High Surge Capability● Types from 150 V to 200V VRRM
● Isolated to Plate
● Not ESD Sensitive FST100150 thru FST100200 VRRM = 150 V - 200 V IF(AV) = 100 A TO-249AB Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg FST100150 150 106 150 -55 to 150 -55 to 150 Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions FST100150 Average forward current (per pkg) Peak forward surge current (per leg) Maximum instantaneous forward voltage (per leg) Maximum Instantaneous reverse current at rated DC blocking voltage (per leg) Thermal characteristics Thermal resistance, junction case (per leg) IF(AV) IFSM VF IR RΘJC TC = 125 °C tp = 8.3 ms, half sine IFM = 50 A, Tj = 25 °C Tj = 25 °C Tj = 100 °C Tj = 150 °C 100 1000 0.88 1 10 30 1.10 FST100200 200 141 200 -55 to 150 -55 to 150 FST100200 100 1000 0.92 1 10 30 1.10 Unit V V V °C °C Unit A A V mA °C/W Oct.
