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GA03IDDJT30-FR4 - Isolated Gate Driver

Datasheet Summary

Description

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Features

  • Requires single 12 V voltage supply.
  • Pin Out compatible with MOSFET driver boards.
  • Multiple Internal level topology for low drive losses.
  • High-side drive capable with 3000 V isolation.
  • 5000 V Signal Isolation (up to 10 s).
  • Capable of high gate currents with 3 W maximum power.
  • RoHS Compliant Product Image GA03IDDJT30-FR4.

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Datasheet Details

Part number GA03IDDJT30-FR4
Manufacturer GeneSiC
File Size 780.27 KB
Description Isolated Gate Driver
Datasheet download datasheet GA03IDDJT30-FR4 Datasheet
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Full PDF Text Transcription

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Isolated Gate Driver Gate Driver for SiC SJT with Output and Signal Isolation Features  Requires single 12 V voltage supply  Pin Out compatible with MOSFET driver boards  Multiple Internal level topology for low drive losses  High-side drive capable with 3000 V isolation  5000 V Signal Isolation (up to 10 s)  Capable of high gate currents with 3 W maximum power  RoHS Compliant Product Image GA03IDDJT30-FR4 VISOLATION PDRIVE fmax = 3000 V = 5W = 350 kHz Section I: Introduction The GA03IDDJT30-FR4 provides an optimized gate drive solution for SiC Junction Transistors (SJT).
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