GA03IDDJT30-FR4 Description
GA03IDDJT30-FR4 Min. 10.8 -5 3.2 20 -55 Value Typical 12 0 5.0 36 160 187 4 0.35 21 14 19 Max. 13.2 0.8 6.4 50 270 270 9.0 1.8 35 25 350 5.0 1700 ±5000 ±3000 100 Unit V V V mA ns ns A A ns ns kHz W V V V °C g Notes VCC Low RTN VCC Low Signal RTN Signal VCC.
GA03IDDJT30-FR4 Key Features
- Requires single 12 V voltage supply
- Pin Out patible with MOSFET driver boards
- Multiple Internal level topology for low drive losses
- High-side drive capable with 3000 V isolation
- 5000 V Signal Isolation (up to 10 s)
- Capable of high gate currents with 3 W maximum power
- RoHS pliant
- SiC SJT patibility Information Table
- Source Voltage Isolation Voltage, Signal Isolation Voltage, Voltage Supply Storage Temperature Product Weight
- 5 3.2 20