GA040TH65 - Silicon Carbide Thyristor

Features

6500 V Asymmetric SiC NPNP Thyristor.
150 °C operating temperature.
Robust compact fully soldered package.
SOT-227 (ISOTOP) base plate form factor.
Fast turn on characteristics.
Lowest in class Qrr/IT(AVM).

GeneSiC

Datasheet Details

Part number	GA040TH65
Manufacturer	GeneSiC
File Size	318.05 KB
Description	Silicon Carbide Thyristor
Datasheet	GA040TH65 Datasheet
Additional preview pages of the GA040TH65 datasheet.

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Full PDF Text Transcription

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Silicon Carbide Thyristor Features • 6500 V Asymmetric SiC NPNP Thyristor • 150 °C operating temperature • Robust compact fully soldered package • SOT-227 (ISOTOP) base plate form factor • Fast turn on characteristics • Lowest in class Qrr/IT(AVM) Applications • Grid Tied Solar Inverters • Wind Power Inverters • HVDC Power Conversion • Utility Scale Power Conversion • Trigger Circuits/Ignition Circuits Maximum Ratings Parameter Repetitive peak forward voltage Repetitive peak reverse voltage Maximum average on-state current RMS on-state current Non-repetitive peak on-state current Power dissipation Operating and storage temperature Electrical Characteristics Parameter Maximum peak on state voltage Anode-cathode threshold voltage Anode-cathode slope resistance Leakage current Gate trigger cu

Published: Apr 14, 2017 |