GeneSiC GA040TH65
Silicon Carbide Thyristor
FEATURES
● 6500 V Asymmetric SiC NPNP Thyristor● 150 °C operating temperature
● Robust compact fully soldered package
● SOT-227 (ISOTOP) base plate form factor
● Fast turn on characteristics
● Lowest in class Qrr/IT(AVM)
APPLICATIONS
● Grid Tied Solar Inverters● Wind Power Inverters
● HVDC Power Conversion
● Utility Scale Power Conversion
● Trigger Circuits/Ignition Circuits
MAXIMUM RATINGS
Parameter Repetitive peak forward voltage Repetitive peak reverse voltage Maximum average on-state current RMS on-state current Non-repetitive peak on-state current Power dissipation Operating and storage temperatureELECTRICAL CHARACTERISTICS
Parameter Maximum peak on state voltage Anode-cathode threshold voltage Anode-cathode slope resistance Leakage current Gate trigger current Holding current Rise time Delay time Reverse recovery charge Recovered charge, 50% chord Reverse recovery current Circuit commutated turn-off time Thermal Characteristics