GA08JT17-247 - Junction Transistor

Features

175 °C Maximum Operating Temperature.
Gate Oxide Free SiC Switch.
Exceptional Safe Operating Area.
Excellent Gain Linearity.
Temperature Independent Switching Performance.
Low Output Capacitance.
Positive Temperature Coefficient of RDS,ON.
Suitable for Connecting an Anti-parallel Diode Package.
RoHS Compliant D VDS RDS(ON) ID @ Tc=125°C hFE Tc=25°C = = = = 1700 V 230 mΩ 8A 60 D S D G TO-247AB G S Advantages.
Compatible with Si MOSFET/IGB.

GeneSiC

Datasheet Details

Part number	GA08JT17-247
Manufacturer	GeneSiC
File Size	1.67 MB
Description	Junction Transistor
Datasheet	GA08JT17-247 Datasheet
Additional preview pages of the GA08JT17-247 datasheet.

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Full PDF Text Transcription

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GA08JT17-247 Normally – OFF Silicon Carbide Junction Transistor Features  175 °C Maximum Operating Temperature  Gate Oxide Free SiC Switch  Exceptional Safe Operating Area  Excellent Gain Linearity  Temperature Independent Switching Performance  Low Output Capacitance  Positive Temperature Coefficient of RDS,ON  Suitable for Connecting an Anti-parallel Diode Package  RoHS Compliant D VDS RDS(ON) ID @ Tc=125°C hFE Tc=25°C = = = = 1700 V 230 mΩ 8A 60 D S D G TO-247AB G S Advantages  Compatible with Si MOSFET/IGBT Gate Drive ICs  > 20 µs Short-Circuit Withstand Capability  Lowest-in-class Conduction Losses  High Circuit Efficiency  Minimal Input Signal Distortion  High Amplifier Bandwidth Absolute Maximum Ratings Parameter Drain – Source Voltage Continuous Drain Curre

Published: Apr 14, 2017 |