GB01SHT12-CAL Description
High Temperature Silicon Carbide Power Schottky Diode.
GB01SHT12-CAL Key Features
- 1200 V Schottky rectifier
- 210°C maximum operating temperature
- Zero reverse recovery charge
- Superior surge current capability
- Positive temperature coefficient of VF
- Temperature independent switching behavior
- Lowest figure of merit QC/IF
- Available screened to Mil-PRF-19500
- High temperature operation
- Improved circuit efficiency (Lower overall cost)