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GB01SHT12-CAL - High Temperature Silicon Carbide Power Schottky Diode

Features

  • 1200 V Schottky rectifier.
  • 210°C maximum operating temperature.
  • Zero reverse recovery charge.
  • Superior surge current capability.
  • Positive temperature coefficient of VF.
  • Temperature independent switching behavior.
  • Lowest figure of merit QC/IF.
  • Available screened to Mil-PRF-19500 Die Datasheet GB01SHT12-CAL   VRRM IF @ 25 oC QC = 1200 V = 2.5 A = 6 nC   Die Size = 0.9 mm x 0.9 mm Advantages.
  • High temperature operation.
  • Improved circuit effi.

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Datasheet preview – GB01SHT12-CAL

Datasheet Details

Part number GB01SHT12-CAL
Manufacturer GeneSiC
File Size 281.43 KB
Description High Temperature Silicon Carbide Power Schottky Diode
Datasheet download datasheet GB01SHT12-CAL Datasheet
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Full PDF Text Transcription

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  High Temperature Silicon Carbide Power Schottky Diode Features  1200 V Schottky rectifier  210°C maximum operating temperature  Zero reverse recovery charge  Superior surge current capability  Positive temperature coefficient of VF  Temperature independent switching behavior  Lowest figure of merit QC/IF  Available screened to Mil-PRF-19500 Die Datasheet GB01SHT12-CAL   VRRM IF @ 25 oC QC = 1200 V = 2.5 A = 6 nC   Die Size = 0.9 mm x 0.
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