GB2X100MPS12-227 Overview
GB2X100MPS12-227 1200 V SiC MPS™ Diode Silicon Carbide Schottky Diode.
GB2X100MPS12-227 Key Features
- High Avalanche (UIS) Capability
- Enhanced Surge Current Capability
- Superior Figure of Merit QC/IF
- Low Thermal Resistance
- 175 °C Maximum Operating Temperature
- Temperature Independent Switching Behavior
- Positive Temperature Coefficient of VF
- Extremely Fast Switching Speeds
- Low Standby Power Losses
- Improved Circuit Efficiency (Lower Overall Cost)
GB2X100MPS12-227 Applications
- Boost Diode in Power Factor Correction (PFC)