• Part: GB2X100MPS12-227
  • Description: Silicon Carbide Schottky Diode
  • Category: Diode
  • Manufacturer: GeneSiC
  • Size: 478.79 KB
GB2X100MPS12-227 Datasheet (PDF) Download
GeneSiC
GB2X100MPS12-227

Key Features

  • High Avalanche (UIS) Capability
  • Enhanced Surge Current Capability
  • Superior Figure of Merit QC/IF
  • Low Thermal Resistance
  • 175 °C Maximum Operating Temperature
  • Temperature Independent Switching Behavior
  • Positive Temperature Coefficient of VF
  • Extremely Fast Switching Speeds